Back to English Home
Back to Chinese Home

Plenary Speakers

Binner, Jon (UK)
Ikuhara, Yuichi (Japan)
Randall, Clive A. (USA)
Singh, Dileep (USA)


Keynote Speakers
(to be added)

Amanov, A. (Korea)
Azuma, M. (Japan)
Bando, Y. (China)
Bell, A.J. (UK)
Bordia, R. (USA)
Carty, W.M. (USA)
Ching, W.Y. (USA)
Esposito, V. (Denmark)
Fahrenholtz, W. (USA)
Feteira, A. (UK)
Fromling, T. (Germany)
Geffroy, P.M. (France)
Graule, T. (Switzerland)
Gu, N. (China)
Harris, V. (USA)
Hilmas, G. (USA)
Hinoki, T. (Japan)
Ikesue, A. (Japan)
Kim, Y.W. (Korea)
Levy, E. (Germany)
Li, J.G. (Japan)
Li, M. (UK)
Li, S. (Australia)
Lin, F.H. (Taiwan)
Liu, J.H. (China)
Lleonart, J.R.M. (Spain)
Luo, J. (USA)
Naito, M. (Japan)
Noudem, J.G. (France)
Olevsky, E. (USA)
Reaney, I. (UK)
Reimanis, I.E. (USA)
Riedel, R. (Germany)
Rosei, F. (Canada)
Silvestroni, L. (Italy)
Snyder, G.J. (USA)
Sun, N.X. (USA)
Szafran, M. (Poland)
Tanaka, I. (Japan)
Tanemura, S. (Japan)
Tatami, J. (Japan)
Topfer, J. (Germany)
Vasylkiv, O. (Japan)
Vassen, R. (Germany)
Wang, M. (Hong Kong)
Wang, S.R. (USA)
Wang, X.L. (Australia)
Wang, You (China)
Weber, W.J. (USA)
Woydt, M. (Germany)
Yamashita, H. (Japan)
Yang, J.H. (USA)
Yue, Z.X. (China)
Zhang, S.J. (Australia)
Zhang, Y.W. (USA)
Zhu, Y.F. (China)




Invited talk
The photoluminescencecharacterization of irradiated defects in semiconducting diamond

Kaiyue Wang
Taiyuan University of Science and Technology, China

Dr. Kaiyue Wang is an associate professor at Taiyuan University of Science and Technology. He received his Doctor degree from Tianjin University in 2012 (Hosted by Prof. Zhi-Hong Li). From 12/2010 to 12/2011He got the CSC scholarship to study at the University of Bristol as a joint PhD student hosted by Prof. J. W. Steeds (FRS). After that, he served as a researcher and the current position in 2012 and 2014, respectively. Meanwhile, he visited the University of California, Irvine (11/2013~05/2014), and then joined Xian Jiaotong University as a post-doctoral researcher (11/2016~11/2018, hosted by Prof. Hong-Xing Wang). His interest involves the laser spectroscopy, epitaxial growth and defects of diamond and SiC. Currently, he has bought a new machine of Renishaw Raman Spectrometer in Via Plus with 325nm and 532nm laser excitation, fitted with a Linkam liquid nitrogen cooling cell (low to 77K). The photoluminescence spectrum performed by this machine is very sensitive to the defects of semiconductor but non-destructive to the materials. The distribution of defects in 2D and 3D is also studied by technology of the Streamline HR fast scanning image. The 13C, 15N, 11B isotopic samples are aided to identify the atomic structure of defects in semiconductors. The diamonds including doping samples are grown by MPCVD at the Xian Jiaotong University or bought from 3B Institute, Element 6 and NIMS; The SiC samples are mainly grown by PVD in the company of CETC2, China.


Symposium H:  Advanced materials for next generation nuclear energy





Invited Speakers
(to be added)

Ao, Y.H. (China)
Bai, Y.L. (China)
Bernard, S. (France)
Biesuz, M. (Italy)
Cao, L.M. (China)
Castano, V.M. (Mexico)
Chan, Y.T. (Taiwan)
Chang, A.M. (China)
Chang, J. (China)
Che, R.C. (China)
Chen, L. (China)
Chen, W.P. (China)
Chen, X.F. (China)
Chen, X.M. (China)
Chen, Y. (Hong Kong)
Cheon, I.C. (Korea)
Chu, Y.H. (China)
Cologna, M. (Germany)
Cooper, V. (USA)
Delaunay, J.J. (Japan)
Dong, F. (China)
Fan, Y.C. (China)
Feng, J. (China)
Fonseca, F.C. (Brazil)
Fu, Q.Y. (China)
Furuse, H. (Japan)
Guo, L.M. (China)
Hintzen, H.T. (Netherland)
Hong, J.W. (China)
Hu, C.F. (China)
Ionescu, E. (Germany)
Jeon, J.H. (Korea)
Jeong, S.J. (Korea)
Jo, W. (Korea)
Kim, B.N. (Japan)
Kim, I.W. (Korea)
Kim, M.H. (Korea)
Kita, H. (Japan)
Koruza, J. (Germany)
Koumoto, K. (Japan)
Kuo, C.H. (Taiwan)
Lee, J.S. (Korea)
Lee, S. (Korea)
Lee, S.H. (Korea)
Lee, Y. (Korea)
Li, C.J. (China)
Li, J. (China)
Li, J.Q. (China)
Li, Q. (China)
Li, S. (China)
Liao, T. (Australia)
Liu, B. (China)
Liu, R.Z. (China)
Lopez-Honorato, E. (Mexico)
Lu, H.Y. (China)
Lu, K. (USA)
Ma, Q.L. (Germany)
Mandovani, D. (Canada)
Masuda, Y. (Japan)
Meng, F.L. (China)
Mimura, K. (Japan)
Mo, Y.F. (USA)
Morita, K. (Japan)
Mortier, M. (France)
Motz, G. (Germany)
Ni, D.W. (China)
Ogla, F. (Germany)
Ong, T.G. (Taiwan)
Peng, C.H. (Taiwan)
Ravikumar, N.V. (India)
Ren, Z.F. (USA)
Rolandi, M. (USA)
Roy, A.L. (Hong Kong)
Serquis, A. (Argentina)
Sheindlin, M. (Russia)
Shih, T.H. (Korea)
Shklover, V. (Switzerland)
Singh, David (USA)
Sloof, W.G. (Netherland)
Smeacetto, F. (Italy)
Song, T.K. (Korea)
Soraru, G.D. (Italy)
Sun, L.C. (China)
Tamerler, C. (USA)
Tan, X.L. (USA)
Tao, S.Y. (China)
Tsai, C.L. (Germany)
Vandeperre, L. (UK)
Wang, H. (China)
Wang, J.M. (China)
Wang, J.Y. (China)
Wang, K. (China)
Wang, K.Y. (China)
Wang, R.P. (Japan)
Wang, Y.G. (China)
Wu, J.G. (China)
Wu, Y.Q. (USA)
Xiang, H.M. (China)
Xiao, H.Y. (China)
Xiao, P. (China)
Xu, K. (China)
Yan, H.X. (UK)
Yang, K.S. (USA)
Yang, W.Y. (China)
Yin, J. (China)
Yu, H.J. (China)
Yu, Z.J. (China)
Yun, H.S. (Korea)
Zeng, Q.F. (China)
Zhai, J.W. (China)
Zhang, J.F. (China)
Zhang, J.L. (China)
Zhang, K.B. (China)
Zhang, N. (China)
Zheng, X.B. (China)
Zhou, S.M. (China)
Zhou, Y. (Japan)
Zhou, Y.C. (China)
Zhu, J.J. (USA)
Zhu, K.J. (China)
Zych, E. (Poland)