Prof. Osamu Nakatsuka

Nagoya University, Japan

Invited talk
Development of GeSn and related semiconductor thin films for next generation optoelectronic applications

Osamu Nakatsuka was born in Osaka, Japan, in 1972. He received the BS degree in applied physics, the MS and Ph.D degrees in crystalline materials science from Nagoya University, Japan, in 1995, 1997, and 2000, respectively.

In 2000, he joined the Venture Business laboratory, Kyoto University, Japan as Postdoctoral Fellow and was engaged in the development of metal/SiC contact technology. In 2001, he moved to the Center for Integrated Research in Science and Engineering, Nagoya University, Japan, and was engaged in the research and development of materials and process technology for Si MOSFET applications. From 2006 to 2011, he was a Visiting Research Fellow in Japan Synchrotron Radiation Research Institute, Japan. From 2010, he was an Associate Professor in the Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University. From 2015 to 2016, he was a Visiting Associate Professor in the Department of Electrical Engineering, Stanford University, USA.

From 2016, he is a Professor in Graduate School of Engineering, Nagoya University, and currently engages in the research and development of thin film growth and interface engineering related to group-IV semiconductors for Si nanoelectronics. He is a member of the Japan Society of Applied Physics, the Surface Science Society in Japan, and the Vacuum Society of Japan.





News
Some young Chinese Scholars are also invited to CICC-10 (see list)